org/content/aip/journal/apl/104/1?ver=pdfcov Published by the AIP Publishing Articles you may be interested in Strain and defects in Si-doped (Al)GaN epitaxial layers J. Appl. Phys. 112, 093102 (2012); 10.1063/1.4761815 Dislocation climb in two-dimensional discrete dislocation dynamics J. Appl. Phys. 111, 103522 (2012); 10.1063/1.4718432 Dislocation movement in GaN films Appl. Phys. Lett. 97, 261907 (2010); 10.1063/1.3532965 Room-temperature dislocation climb in metallic interfaces Appl. Phys. Lett. 94, 131910…
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