Pierre-Antoine Geslin, Benoît Appolaire, and Alphonse Finel Citation: Applied Physics Letters 104, 011903 (2014); doi: 10.1063/1.4860999 View online: http://dx.doi.org/10.1063/1.4860999 View Table of Contents: http://scitation.aip.org/content/aip/journal/apl/104/1?ver=pdfcov Published by the AIP Publishing Articles you may be interested in Strain and defects in Si-doped (Al)GaN epitaxial layers J. Appl. Phys. 112, 093102 (2012); 10.1063/1.4761815 Dislocation climb in two-dimensional discrete dislocation dynamics…
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