111, 103522 (2012); 10.1063/1.4718432 Dislocation movement in GaN films Appl. Phys. Lett. 97, 261907 (2010); 10.1063/1.3532965 Room-temperature dislocation climb in metallic interfaces Appl. Phys. Lett. 94, 131910 (2009); 10.1063/1.3111137 Edge-type misfit dislocations produced by thermal processing of pre-relaxed In x Ga 1−x As/GaAs heterostructures J. Appl. Phys. 88, 5975 (2000); 10.1063/1.1315615 This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms…
Words 3727 - Pages 15